| PART |
Description |
Maker |
| NTE15049AC NTE15040-ECG NTE15048-ECG NTE15050AC NT |
Surge arrester (gas filled). Nominal breakdown voltage 240VAC.
Surge arrester (gas filled). Nominal breakdown voltage 600VDC
Surge arrester (gas filled). Nominal breakdown voltage 230VDC
Surge arrester (gas filled). Nominal breakdown voltage 300VDC
Surge arrester (gas filled). Nominal breakdown voltage 90VDC
Surge arrester (gas filled). Nominal breakdown voltage 110VDC
Surge Arresters (Gas Filled) 避雷器（充气
Surge arrester (gas filled). Nominal breakdown voltage 350VDC
Surge arrester (gas filled). Nominal breakdown voltage 145VDC
Surge arrester (gas filled). Nominal breakdown voltage 470VDC
Surge arrester (gas filled). Nominal breakdown voltage 75VDC
Surge arrester (gas filled). Nominal breakdown voltage 120VAC.
|
NTE Electronics, Inc.
|
| 93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM
2K 5.0V Automotive Temperature Microwire Serial EEPROM
Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
| 2SC3295 |
High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High voltage: VCEO = 50 V.
|
TY Semiconductor Co., L...
|
| 2SA1413-Z |
High Voltage: VCEO=-600V High speed:tr 1.0ìs Collector to Base Voltage VCBO -600 V
|
TY Semiconductor Co., Ltd
|
| 2SC2881 |
Voltage Amplifier Applications
High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3
Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
|
Agilent(Hewlett-Packard)
|
| BAS85 |
Low forward voltage High breakdown voltage Guard ring protected
|
TY Semiconductor Co., Ltd
|
| PZTA42 |
High breakdown voltage
|
TY Semiconductor Co., Ltd
|
| HDS20U30GW |
High Breakdown Voltage
|
SemiHow Co.,Ltd.
|
| MMSTA92 |
High breakdown voltage
|
TY Semiconductor Co., Ltd
|
| 2SA1257 |
High breakdown voltage. Small output capacitance.Collector-base voltage VCBO -180 V
|
TY Semiconductor Co., Ltd
|
| 2SD814A |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
